Please use this identifier to cite or link to this item:
Title: A new OMCVD iridium precursor for thin film deposition
Authors: Serp, Philippe
Feurer, Roselyne
Kalck, Philippe
Gomes, Helder
Faria, Joaquim
Figueiredo, José
Issue Date: 2001
Publisher: Wiley
Citation: Serp, Philippe; Feurer, Roselyne; Kalck, Philippe; Gomes, Helder; Faria, Joaquim; Figueiredo, José (2001) - A new OMCVD iridium precursor for thin film deposition. Chemical Vapor Deposition. ISSN 0948-1907. 7:2 p.59-62
Abstract: A new one step synthesis of a volatile iridium OMCVD precursor with 60 % yield is described. Using the precursor [Ir(-SC(CH3)3)(CO)2]2 (see Figure), it is possible to obtain iridium of high purity. TGA/DTA analyses indicate that the precursor melts at 128 °C and starts to decompose at 160 °C. SEM analysis reveals that films deposited above 300 °C have a lamellar morphology while nodular morphology was obtained below 250 °C.
ISSN: 0948-1907
Publisher Version:
Appears in Collections:DTQB - Artigos em Revistas Indexados ao ISI/Scopus

Files in This Item:
File Description SizeFormat 
ChemDeposition-7-59-2001.pdf325,67 kBAdobe PDFView/Open    Request a copy
ChemDeposition-7-59-2001 - resumo.pdf93,5 kBAdobe PDFView/Open

FacebookTwitterDeliciousLinkedInDiggGoogle BookmarksMySpace
Formato BibTex MendeleyEndnote Degois 

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.