Publication
A new OMCVD iridium precursor for thin film deposition
| dc.contributor.author | Serp, Philippe | |
| dc.contributor.author | Feurer, Roselyne | |
| dc.contributor.author | Kalck, Philippe | |
| dc.contributor.author | Gomes, Helder | |
| dc.contributor.author | Faria, Joaquim | |
| dc.contributor.author | Figueiredo, José | |
| dc.date.accessioned | 2010-01-20T18:07:18Z | |
| dc.date.available | 2010-01-20T18:07:18Z | |
| dc.date.issued | 2001 | |
| dc.description.abstract | A new one step synthesis of a volatile iridium OMCVD precursor with 60 % yield is described. Using the precursor [Ir(-SC(CH3)3)(CO)2]2 (see Figure), it is possible to obtain iridium of high purity. TGA/DTA analyses indicate that the precursor melts at 128 °C and starts to decompose at 160 °C. SEM analysis reveals that films deposited above 300 °C have a lamellar morphology while nodular morphology was obtained below 250 °C. | pt |
| dc.identifier.citation | Serp, Philippe; Feurer, Roselyne; Kalck, Philippe; Gomes, Helder; Faria, Joaquim; Figueiredo, José (2001). A new OMCVD iridium precursor for thin film deposition. Chemical Vapor Deposition. ISSN 0948-1907. 7:2 p.59-62 | pt |
| dc.identifier.doi | 10.1002/1521-3862(200103)7:2<59::AID-CVDE59>3.0.CO;2-S | |
| dc.identifier.issn | 0948-1907 | |
| dc.identifier.uri | http://hdl.handle.net/10198/1360 | |
| dc.language.iso | eng | pt |
| dc.publisher | Wiley | pt |
| dc.title | A new OMCVD iridium precursor for thin film deposition | pt |
| dc.type | journal article | |
| dspace.entity.type | Publication | |
| oaire.citation.endPage | 62 | pt |
| oaire.citation.startPage | 59 | pt |
| oaire.citation.title | Chemical Vapor Deposition | pt |
| person.identifier.ciencia-id | 6218-1E19-13EE | |
| person.identifier.orcid | 0000-0001-6898-2408 | |
| rcaap.rights | restrictedAccess | pt |
| rcaap.type | article | pt |
| relation.isAuthorOfPublication | 0eb96337-224a-4339-9918-334436fbbb99 | |
| relation.isAuthorOfPublication.latestForDiscovery | 0eb96337-224a-4339-9918-334436fbbb99 |