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Effects of the ESD protections in the behaviour of a 2.4 GHz RF transceiver: problems and solutions

dc.contributor.authorCarmo, João Paulo
dc.contributor.authorMendes, P.M.
dc.contributor.authorRibeiro, Fernando
dc.contributor.authorCorreia, José H.
dc.date.accessioned2008-09-22T13:43:03Z
dc.date.available2008-09-22T13:43:03Z
dc.date.issued2008
dc.description.abstractThis paper identifies the main problems related to the Electrostatic Discharge (ESD) in submicron CMOS processes. The mitigation of this problem is made with the use of protections, in order to avoid the destruction of the internal and nput/output circuits connected to the bondingpads. In the 2.4 GHz ISM band, the parallel capacitance and the serial resistance of the ESD protections have effects in the behavior of RF transceivers. The major identified effect was the transmission range. It is proposed two strategies to solve the secondary effects, due to the protections. All the measurements and simulations were made for a 2.4 GHz RF CMOS transceiver, designed and fabricated using the UMC 0.18 µm RF CMOS process.en
dc.event.dateJulho de 2008en
dc.event.locationCambridge, UKen
dc.event.title2008 IEEE International Symposium on Industrial Electronics - ISIE 2008en
dc.event.typeConferênciaen
dc.identifier.citationISIE08 - IEEE International Symposium on Industrial Electronics. Cambridge, 2008. ISBN 978-1-4244-1666-0en
dc.identifier.urihttp://hdl.handle.net/10198/887
dc.language.isoengen
dc.pagination935-938en
dc.peerreviewedyesen
dc.publisherIEEEen
dc.subjectRF CMOS transceiveren
dc.subjectESD protectionsen
dc.subjectMicrosystemen
dc.subjectMeasurementsen
dc.subjectMicrowavesen
dc.subjectSTUBen
dc.titleEffects of the ESD protections in the behaviour of a 2.4 GHz RF transceiver: problems and solutionsen
dc.typeconference object
dspace.entity.typePublication
rcaap.rightsopenAccessen
rcaap.typeconferenceObjecten

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