Serp, PhilippeFeurer, RoselyneKalck, PhilippeGomes, HelderFaria, JoaquimFigueiredo, José2010-01-202010-01-202001Serp, Philippe; Feurer, Roselyne; Kalck, Philippe; Gomes, Helder; Faria, Joaquim; Figueiredo, José (2001). A new OMCVD iridium precursor for thin film deposition. Chemical Vapor Deposition. ISSN 0948-1907. 7:2 p.59-620948-1907http://hdl.handle.net/10198/1360A new one step synthesis of a volatile iridium OMCVD precursor with 60 % yield is described. Using the precursor [Ir(-SC(CH3)3)(CO)2]2 (see Figure), it is possible to obtain iridium of high purity. TGA/DTA analyses indicate that the precursor melts at 128 °C and starts to decompose at 160 °C. SEM analysis reveals that films deposited above 300 °C have a lamellar morphology while nodular morphology was obtained below 250 °C.engjournal article10.1002/1521-3862(200103)7:2<59::AID-CVDE59>3.0.CO;2-S