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Abstract(s)
A new one step synthesis of a volatile iridium OMCVD precursor with 60 % yield is described. Using the precursor [Ir(-SC(CH3)3)(CO)2]2 (see Figure), it is possible to obtain iridium of high purity. TGA/DTA analyses indicate that the precursor melts at 128 °C and starts to decompose at 160 °C. SEM analysis reveals that films deposited above 300 °C have a lamellar morphology while nodular morphology was obtained below 250 °C.
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Citation
Serp, Philippe; Feurer, Roselyne; Kalck, Philippe; Gomes, Helder; Faria, Joaquim; Figueiredo, José (2001). A new OMCVD iridium precursor for thin film deposition. Chemical Vapor Deposition. ISSN 0948-1907. 7:2 p.59-62
Publisher
Wiley